MEMS

DISPLAY

III-VS, OPTOELECTRONICS

ADVANCED PACKAGING


CONTACT US:
General & Medical
DISCLAIMER

MCC


SU-8 >
SU-8 3000 >
SU-8 2000 >

Products

KMPR

KMPR® 1000 i-Line photoresist is a high contrast, epoxy based photoresist that can be developed in a conventional aqueous alkaline developer (TMAH) and readily stripped from the substrate. KMPR is designed to coat 4-120 µm in a single step using four standard viscosities.

KMPR can be easily removed after completion of electroforming using commercially available chemical removers. Lithography can be used to form KMPR molds that have the required dimensional accuracy and sidewall verticality for micro electroforming.

Deep reactive ion etching (DRIE) compatible with the CMOS process, KMPR will survive dry etch for the extended periods of time necessary to perform >20 µm deep etching with HAR.



Material uses:

  • MEMS
  • DRIE
  • Electroplating
  • Permanent Structures

Material attributes:

  • High aspect ratio with vertical sidewalls
  • High chemical and plasma resistance
  • Greater than 100 µm film thickness in a single coat
  • Excellent adhesion to metals
  • Wet strips in conventional strippers
  • Excellent dry etch resistance



Plating Permanent

Deep Etch

Plating (100 µM tall Ni posts, KMPR removed)

Electroformed Ni gear after stripping KMPR
Source: Univ. of Birmingham

 Learn More


    Copyright © MicroChem Corp.
+1.617.965.5511