KMPR® 1000 i-Line photoresist is a high contrast, epoxy based photoresist that can be developed in a conventional aqueous alkaline developer (TMAH) and readily stripped from the substrate. KMPR is designed to coat 4-120 µm in a single step using four standard viscosities.
KMPR can be easily removed after completion of electroforming using commercially available chemical removers. Lithography can be used to form KMPR molds that have the required dimensional accuracy and sidewall verticality for micro electroforming.
Deep reactive ion etching (DRIE) compatible with the CMOS process, KMPR will survive dry etch for the extended periods of time necessary to perform >20 µm deep etching with HAR.