MicroChem offers three products for e-beam lithography.
PMMA is a high resolution positive resist that is often used with our copolymer materials in bi-layer and tri-layer schemes for metal deposition and T-gates.
ma-N 2400 is a high resolution, negative DUV/e-beam resist.
ma-N 2400 can be used as either a negative DUV or high resolution, negative e-beam resist. It is available in a number of dilutions ranging from 0.1 micron to 1 micron. The ma-D 525 developer is recommended along with Remover PG for removal.
PMMA Positive Resists: Benefits/Attributes
e-beam and x-ray imageable
Wide range of film thicknesses
Resist developers and strippers
Excellent adhesion to most substrates
ma-N 2400 Negative Resist: Benefits/Attributes
e-beam and DUV-sensitive
Suitable as etch mask exhibiting high dry and wet etch resistance