Applications > E-Beam Lithography

E-Beam Lithography

MicroChem offers three products for e-beam lithography.

  • PMMA is a high resolution positive resist that is often used with our copolymer materials in bi-layer and tri-layer schemes for metal deposition and T-gates.
  • ma-N 2400 is a high resolution, negative DUV/e-beam resist.

ma-N 2400 can be used as either a negative DUV or high resolution, negative e-beam resist. It is available in a number of dilutions ranging from 0.1 micron to 1 micron. The ma-D 525 developer is recommended along with Remover PG for removal.



PMMA Positive Resists: Benefits/Attributes

  • Positive tone
  • e-beam and x-ray imageable
  • Wide range of film thicknesses
  • Resist developers and strippers
  • Excellent adhesion to most substrates



ma-N 2400 Negative Resist: Benefits/Attributes

  • e-beam and DUV-sensitive
  • Suitable as etch mask exhibiting high dry and wet etch resistance
  • Good thermal stability
  • High resolution capability
  • Aqueous alkaline development


Resist thickness: 180 nm
Lines and spaces: 80 nm


Rest thickness: 800nm
Lines and spaces: 250 nm

Learn More about ma-N 2400
Nanometer Patterning Using ma-N 2400
Nanometer Patterning and High Aspect Ratio Patterning









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